Pattern transfer of directed self-assembly (DSA) patterns for CMOS device applications

Hsin-Yu Tsai; Hiroyuki Miyazoe; Sebastian Engelmann; Sarunya Bangsaruntip; Isaac Lauer; Jim Bucchignano; Dave Klaus; Lynne Gignac; Eric Joseph; Joy Cheng; Dan Sanders; Michael Guillorn

doi:10.1117/12.2014259

29 March 2013 Pattern transfer of directed self-assembly (DSA) patterns for CMOS device applications

Hsin-Yu Tsai, Hiroyuki Miyazoe, Sebastian Engelmann, Sarunya Bangsaruntip, Isaac Lauer, Jim Bucchignano, Dave Klaus, Lynne Gignac, Eric Joseph, Joy Cheng, Dan Sanders, Michael Guillorn

Author Affiliations +

Proceedings Volume 8685, Advanced Etch Technology for Nanopatterning II; 86850L (2013) https://doi.org/10.1117/12.2014259
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

We present a study on the optimization of etch transfer processes for circuit relevant patterning in the sub 30 nm pitch regime using directed self assembly (DSA) line-space patterning. This work is focused on issues that impact the patterning of thin silicon fins and gate stack materials. Plasma power, chuck temperature and end point strategy is discussed in terms of their effect on critical dimension (CD) control and pattern fidelity. A systematic study of post-plasma etch annealing processes shows that both CD and line edge roughness (LER) in crystalline Si features can be further reduced while maintaining a suitable geometry for scaled FinFET devices. Results from DSA patterning of gate structures featuring a high-k dielectric, a metal nitride and poly Si gate electrode and a SiN capping layer are also presented. We conclude with the presentation of a strategy for realizing circuit patterns from groups of DSA patterned fins. These combined results further establish the viability of DSA pattern generation as a potential method for CMOS integrated circuit patterning beyond the 10 nm node.

Citation Download Citation

Hsin-Yu Tsai, Hiroyuki Miyazoe, Sebastian Engelmann, Sarunya Bangsaruntip, Isaac Lauer, Jim Bucchignano, Dave Klaus, Lynne Gignac, Eric Joseph, Joy Cheng, Dan Sanders, and Michael Guillorn "Pattern transfer of directed self-assembly (DSA) patterns for CMOS device applications", Proc. SPIE 8685, Advanced Etch Technology for Nanopatterning II, 86850L (29 March 2013); https://doi.org/10.1117/12.2014259

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available