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Proceedings Article

Mask 3D effects and compensation for high NA EUV lithography

[+] Author Affiliations
Sudharshanan Raghunathan, Germain Fenger, Obert Wood

GLOBALFOUNDRIES Inc. (United States)

Greg McIntyre

IBM Corp. (United States)

Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867918 (April 1, 2013); doi:10.1117/12.2011643
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From Conference Volume 8679

  • Extreme Ultraviolet (EUV) Lithography IV
  • Patrick P. Naulleau
  • San Jose, California, USA | February 24, 2013

abstract

Mask shadow compensation for EUV lithography has typically been performed using simple rule-based schemes during optical proximity correction (OPC). However, as feature sizes decrease, the required corrections get more complex as they become dependent on both feature size and type. Thus, OPC models that account for these 3D mask effects are becoming essential. These models become even more important for higher numerical aperture EUV systems due to larger angles of incidence on the mask and tighter process budgets for CD and overlay. This paper will focus on estimating these 3D mask effects and evaluate the extendibility of current available OPC models for some specific higher numerical aperture EUV systems. It is concluded that the current available 3D mask models are capturing the primary effects and it is believed that with further refinement they are likely extendable to meet the needs of future high-NA tools. Additionally, a combination of thinner mask absorber, tighter scanner focus control and/or larger optical magnification will likely be required to print sub-30nm pitch structures with higher numerical aperture EUV systems. © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Sudharshanan Raghunathan ; Greg McIntyre ; Germain Fenger and Obert Wood
" Mask 3D effects and compensation for high NA EUV lithography ", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867918 (April 1, 2013); doi:10.1117/12.2011643; http://dx.doi.org/10.1117/12.2011643


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