Mask shadow compensation for EUV lithography has typically been performed using simple rule-based
schemes during optical proximity correction (OPC). However, as feature sizes decrease, the required corrections
get more complex as they become dependent on both feature size and type. Thus, OPC models that account for
these 3D mask effects are becoming essential. These models become even more important for higher numerical
aperture EUV systems due to larger angles of incidence on the mask and tighter process budgets for CD and
overlay. This paper will focus on estimating these 3D mask effects and evaluate the extendibility of current
available OPC models for some specific higher numerical aperture EUV systems. It is concluded that the
current available 3D mask models are capturing the primary effects and it is believed that with further
refinement they are likely extendable to meet the needs of future high-NA tools. Additionally, a combination of
thinner mask absorber, tighter scanner focus control and/or larger optical magnification will likely be required
to print sub-30nm pitch structures with higher numerical aperture EUV systems.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sudharshanan Raghunathan ; Greg McIntyre ; Germain Fenger and Obert Wood
Mask 3D effects and compensation for high NA EUV lithography
", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867918 (April 1, 2013); doi:10.1117/12.2011643; http://dx.doi.org/10.1117/12.2011643