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Proceedings Article

Commissioning an EUV mask microscope for lithography generations reaching 8 nm

[+] Author Affiliations
Kenneth A. Goldberg, Iacopo Mochi, Markus Benk, Arnaud P. Allezy, Michael R. Dickinson, Carl W. Cork, Daniel Zehm, James B. Macdougall, Erik Anderson, Farhad Salmassi, Weilun L. Chao, Vamsi K. Vytla, Eric M. Gullikson, Jason C. DePonte, M. S. Gideon Jones, Douglas Van Camp, Jeffrey F. Gamsby, William B. Ghiorso, Hanjing Huang, William Cork, Elizabeth Martin, Rene Delano, Patrick P. Naulleau, Senajith B. Rekawa

Lawrence Berkeley National Lab. (United States)

Eric Van Every, Eric Acome

Advanced Design Consulting USA, Inc. (United States)

Veljko Milanovic

Mirrorcle Technologies, Inc. (United States)

Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867919 (April 1, 2013); doi:10.1117/12.2011688
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From Conference Volume 8679

  • Extreme Ultraviolet (EUV) Lithography IV
  • Patrick P. Naulleau
  • San Jose, California, United States | February 24, 2013

abstract

The SEMATECH High-NA Actinic Reticle review Project (SHARP) is a synchrotron-based, EUV-wavelength microscope, dedicated to photomask imaging, now being commissioned at Lawrence Berkeley National Laboratory. In terms of throughput, resolution, coherence control, stability and ease of use, SHARP represents a significant advance over its predecessor, the SEMATECH Berkeley Actinic Inspection Tool (AIT), which was decommissioned in September 2012. SHARP utilizes several advanced technologies to achieve its design goals: including the first Fouriersynthesis illuminator on a zoneplate microscope, EUV MEMS mirrors, and high-efficiency freestanding zoneplate lenses with numerical aperture values up to 0.625 (4×). In its first week of operation, SHARP demonstrated approximately 150 times higher light throughput than AIT and a spatial resolution down to 55-nm half-pitch with 0.42 4×NA (i.e. the smallest feature size on our test mask.) This paper describes the current status of the tool commissioning and the performance metrics available at this early stage. © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Kenneth A. Goldberg ; Iacopo Mochi ; Markus Benk ; Arnaud P. Allezy ; Michael R. Dickinson, et al.
" Commissioning an EUV mask microscope for lithography generations reaching 8 nm ", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 867919 (April 1, 2013); doi:10.1117/12.2011688; http://dx.doi.org/10.1117/12.2011688


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