CO2/Sn LPP EUV sources for device development and HVM

David C. Brandt; Igor V. Fomenkov; Nigel R. Farrar; Bruno La Fontaine; David W. Myers; Daniel J. Brown; Alex I. Ershov; Richard L. Sandstrom; Georgiy O. Vaschenko; Norbert R. Böwering; Palash Das; Vladimir B. Fleurov; Kevin Zhang; Shailendra N. Srivastava; Imtiaz Ahmad; Chirag Rajyaguru; Silvia De Dea; Wayne J. Dunstan; Peter Baumgart; Toshi Ishihara; Rod D. Simmons; Robert N. Jacques; Robert A. Bergstedt; Peter I. Porshnev; Christopher J. Wittak; Robert J. Rafac; Jonathan Grava; Alexander A. Schafgans; Yezheng Tao; Kay Hoffmann; Tedsuja Ishikawa; David R. Evans; Spencer D. Rich

doi:10.1117/12.2011212

1 April 2013 CO₂/Sn LPP EUV sources for device development and HVM

David C. Brandt, Igor V. Fomenkov, Nigel R. Farrar, Bruno La Fontaine, David W. Myers, Daniel J. Brown, Alex I. Ershov, Richard L. Sandstrom, Georgiy O. Vaschenko, Norbert R. Böwering, Palash Das, Vladimir B. Fleurov, Kevin Zhang, Shailendra N. Srivastava, Imtiaz Ahmad, Chirag Rajyaguru, Silvia De Dea, Wayne J. Dunstan, Peter Baumgart, Toshi Ishihara, Rod D. Simmons, Robert N. Jacques, Robert A. Bergstedt, Peter I. Porshnev, Christopher J. Wittak, Robert J. Rafac, Jonathan Grava, Alexander A. Schafgans, Yezheng Tao, Kay Hoffmann, Tedsuja Ishikawa, David R. Evans, Spencer D. Rich

Author Affiliations +

Proceedings Volume 8679, Extreme Ultraviolet (EUV) Lithography IV; 86791G (2013) https://doi.org/10.1117/12.2011212
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

Laser produced plasma (LPP) systems have been developed as the primary approach for use in EUV scanner light sources for optical imaging of circuit features at 20nm nodes and beyond. This paper provides a review of development progress and productization status for LPP extreme-ultra-violet (EUV) sources with performance goals targeted to meet specific requirements from ASML. We present the latest results on power generation and collector protection for sources in the field operating at 10W nominal power and in San Diego operating in MOPA (Master Oscillator Power Amplifier) Prepulse mode at higher powers. Semiconductor industry standards for reliability and source availability data are provided. In these proceedings we show results demonstrating validation of MOPA Prepulse operation at high dose-controlled power: 40 W average power with closed-loop active dose control meeting the requirement for dose stability, 55 W average power with closed-loop active dose control, and early collector protection tests to 4 billion pulses without loss of reflectivity.

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David C. Brandt, Igor V. Fomenkov, Nigel R. Farrar, Bruno La Fontaine, David W. Myers, Daniel J. Brown, Alex I. Ershov, Richard L. Sandstrom, Georgiy O. Vaschenko, Norbert R. Böwering, Palash Das, Vladimir B. Fleurov, Kevin Zhang, Shailendra N. Srivastava, Imtiaz Ahmad, Chirag Rajyaguru, Silvia De Dea, Wayne J. Dunstan, Peter Baumgart, Toshi Ishihara, Rod D. Simmons, Robert N. Jacques, Robert A. Bergstedt, Peter I. Porshnev, Christopher J. Wittak, Robert J. Rafac, Jonathan Grava, Alexander A. Schafgans, Yezheng Tao, Kay Hoffmann, Tedsuja Ishikawa, David R. Evans, and Spencer D. Rich "CO₂/Sn LPP EUV sources for device development and HVM", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86791G (1 April 2013); https://doi.org/10.1117/12.2011212

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