Electronic structure of KTiOAsO4, a novel material for non-linear optical applications

Victor Atuchin; Oleg Y. Khyzhun; V.L. Bekenev; A.K. Sinelnichenko; L. I. Isaenko; S. A. Zhurkov

doi:10.1117/12.2017597

8 May 2013 Electronic structure of KTiOAsO₄, a novel material for non-linear optical applications

Victor Atuchin, Oleg Y. Khyzhun, V.L. Bekenev, A.K. Sinelnichenko, L. I. Isaenko, S. A. Zhurkov

Proceedings Volume 8772, Nonlinear Optics and Applications VII; 87721I (2013) https://doi.org/10.1117/12.2017597
Event: SPIE Optics + Optoelectronics, 2013, Prague, Czech Republic

Abstract

A high-quality KTiOAsO4 (KTA) single crystal has been successfully synthesized employing the high temperature solution growth technique with rotating and pooling. The XPS valence-band spectra have been measured for pristine and the 1.5 keV Ar⁺ ion-bombarded thin (001)KTA plate cut from the crystal part that was without any optical inhomogeneities or domain boundaries. The present XPS measurements have revealed the existence of two O 2s subbands on the XPS spectrum of the pristine (001)KTA surface. It has been established that 1.5 keV Ar⁺ ion bombardment of the (001)KTA surface causes the complete elimination of the O 2s sub-band related to oxygen atoms involved in the formation of Ti–O–As bonds in KTA. In addition, the XPS results reveal that such a treatment leads to a significant decrease of the relative intensity of the XPS As⁵⁺ 3d core-level spectrum and causes the formation of the additional As⁰ 3d core-level spectrum in the topmost layer of the (001)KTA surface. The experimental data are compared to the results of the first-principles band-structure calculations of KTA.

Citation Download Citation

Victor Atuchin, Oleg Y. Khyzhun, V.L. Bekenev, A.K. Sinelnichenko, L. I. Isaenko, and S. A. Zhurkov "Electronic structure of KTiOAsO₄, a novel material for non-linear optical applications", Proc. SPIE 8772, Nonlinear Optics and Applications VII, 87721I (8 May 2013); https://doi.org/10.1117/12.2017597

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