Paper
17 May 2013 Cu-Sn transient liquid phase wafer bonding for MEMS applications
C. Flötgen, M. Pawlak, E. Pabo, H. J. van de Wiel, G. R. Hayes, V. Dragoi
Author Affiliations +
Proceedings Volume 8763, Smart Sensors, Actuators, and MEMS VI; 87630A (2013) https://doi.org/10.1117/12.2017350
Event: SPIE Microtechnologies, 2013, Grenoble, France
Abstract
The impact of process parameters on final bonding layer quality was investigated for Transient Liquid Phase (TLP) wafer-level bonding based on the Cu-Sn system. Subjects of this investigation were bonding temperature profile, bonding time and contact pressure as well as the choice of metal deposition method and the ratio of deposited metal layer thicknesses. Typical failure modes in Inter-Metallic Compound (IMC) growth for the mentioned process and design parameters were identified and subjected to qualitative and quantitative analysis. The possibilities to avoid abovementioned failures are indicated based on experimental results.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. Flötgen, M. Pawlak, E. Pabo, H. J. van de Wiel, G. R. Hayes, and V. Dragoi "Cu-Sn transient liquid phase wafer bonding for MEMS applications", Proc. SPIE 8763, Smart Sensors, Actuators, and MEMS VI, 87630A (17 May 2013); https://doi.org/10.1117/12.2017350
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Cited by 8 scholarly publications.
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KEYWORDS
Copper

Semiconducting wafers

Tin

Metals

Wafer bonding

Interfaces

Deposition processes

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