Paper
11 June 2013 A plasmonically enhanced pixel structure for uncooled microbolometer detectors
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Abstract
This paper introduces a method of broadband absorption enhancement that can be integrated with the conventional suspended microbolometer process with no significant additional cost. The premise of this study is that electric field can be enhanced throughout the structural layer of the microbolometer, resulting in an increase in the absorption of the infrared radiation in the long wave infrared window. A concentric double C-shaped plasmonic geometry is simulated using the FDTD method, and this geometry is fabricated on suspended pixel arrays. Simulation results and FTIR measurements are in good agreement indicating a broadband absorption enhancement in the 8 µm-12 µm range for LWIR applications. The enhancement is attained using metallic geometries embedded in the structural layer of the suspended microbridge, where the metallic-dielectric interface increases the average absorption of a 35 µm pixel from 67.6% to 80.1%.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ozan Erturk, Enes Battal, Seniz Esra Kucuk, Ali Kemal Okyay, and Tayfun Akin "A plasmonically enhanced pixel structure for uncooled microbolometer detectors", Proc. SPIE 8704, Infrared Technology and Applications XXXIX, 87041E (11 June 2013); https://doi.org/10.1117/12.2019540
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CITATIONS
Cited by 6 scholarly publications.
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KEYWORDS
Absorption

Microbolometers

Plasmonics

Silicon

Infrared imaging

Infrared radiation

Long wavelength infrared

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