Optical metrology of semiconductor wafers in lithography

Arie J. den Boef

doi:10.1117/12.2021169

22 June 2013 Optical metrology of semiconductor wafers in lithography

Arie J. den Boef

Proceedings Volume 8769, International Conference on Optics in Precision Engineering and Nanotechnology (icOPEN2013); 876907 (2013) https://doi.org/10.1117/12.2021169
Event: International Conference on Optics in Precision Engineering and Nanotechnology (icOPEN2013), 2013, Singapore, Singapore

Abstract

This paper presents a concise description of 3 optical measurement systems that play a critical role in optical lithography of semiconductor devices. A level sensor and alignment sensor are described that are used to measure, respectively, wafer height variations and the wafer location prior to resist exposure. The third sensor is an angle-resolved scatterometer that is used to measure the shape (CD) and placement (Overlay) of the resist patterns. It will be shown how these sensors deal with the common challenge of realizing sub-nm precision on a large variety of product stacks in the presence of process variations.

Citation Download Citation

Arie J. den Boef "Optical metrology of semiconductor wafers in lithography", Proc. SPIE 8769, International Conference on Optics in Precision Engineering and Nanotechnology (icOPEN2013), 876907 (22 June 2013); https://doi.org/10.1117/12.2021169

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available