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Proceedings Article

Progress in high-power VCSELs and arrays

[+] Author Affiliations
Rainer Michalzik, Martin Grabherr, Roland Jaeger, Michael Miller, Karl J. Ebeling

Univ. of Ulm (Germany)

Proc. SPIE 3419, Optoelectronic Materials and Devices, 34190P (June 22, 1998); doi:10.1117/12.311008
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From Conference Volume 3419

  • Optoelectronic Materials and Devices
  • Marek Osinski; Yan-Kuin Su
  • Taipei, Taiwan | July 09, 1998

abstract

Recent achievements in the design and fabrication of monolithic high power vertical cavity surface emitting lasers (VCSELs) are reviewed and major distinctions between the scaling properties of top and bottom emitting devices clarified. Although a few hundred milliwatts optical power can be extracted from a single bottom emitting laser, decreasing efficiencies with increasing device diameter suggest the investigation of 2D laser arrays. First experimental results are presented, featuring oxide confined VCSEL arrays at 980 nm wavelength with 3 X 3 elements and maximum output powers up to 650 mW, still delivering 270 mW with 25 percent conversion efficiency under continuous wave operation. With further optimizations of device size and array pitch, emitted power densities averaged over the entire chip area in excess of 1 kW/cm2 should be attainable. © (1998) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.
Citation

Rainer Michalzik ; Martin Grabherr ; Roland Jaeger ; Michael Miller and Karl J. Ebeling
" Progress in high-power VCSELs and arrays ", Proc. SPIE 3419, Optoelectronic Materials and Devices, 34190P (June 22, 1998); doi:10.1117/12.311008; http://dx.doi.org/10.1117/12.311008


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