Paper
21 August 2013 Design and optimization of integrated pixel for the energy-harvesting CMOS image sensor on SOI wafer
Yiling Ding, Chen Shi, Qi Zhang, Li Tian, Hui Wang, Songlin Feng
Author Affiliations +
Proceedings Volume 8908, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications; 89080F (2013) https://doi.org/10.1117/12.2032368
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China
Abstract
The design and optimization of an integrated pixel for the energy-harvesting CMOS image sensor on SOI technology is presented. The pixel works in energy-harvesting mode and imaging mode. A thick-film SOI process is used to implement the photodiodes so that more solar energy and illumination information could be collected than with the thin-film SOI process for the deeper depletion area. Benefitting from the isolation technology of SOI process, the photodiodes do not share substrate anymore. In the harvesting mode, several photodiodes could be connected in series to generate higher voltage as a power supply. The charge speed under the light with different wave length and power density is simulated. The generated voltage is equal to 1.91V under the light with 330nm wave length and 0.6W/cm2 power density.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yiling Ding, Chen Shi, Qi Zhang, Li Tian, Hui Wang, and Songlin Feng "Design and optimization of integrated pixel for the energy-harvesting CMOS image sensor on SOI wafer", Proc. SPIE 8908, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications, 89080F (21 August 2013); https://doi.org/10.1117/12.2032368
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KEYWORDS
Photodiodes

CMOS sensors

Semiconducting wafers

Capacitors

Energy harvesting

Sensors

Silicon

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