Paper
11 September 2013 High performance BGMI circuit for VLWIR FPAs
Li-chao Hao, Hong-lei Chen, Ai-bo Huang, Jun-ling Zhang, Rui-jun Ding
Author Affiliations +
Proceedings Volume 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications; 89071Q (2013) https://doi.org/10.1117/12.2032760
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China
Abstract
An improved CMOS readout integrated circuit (ROIC) for N-on-P very long wavelength (VLWIR) detectors is designed, which has the ability to operate with a simple background suppression. It increases the integration time and the signal-to-noise ratio (SNR) of image data. A buffered gate modulation input (BGMI) cell as input circuit provides a low input resistance, high injection efficiency, and precise biasing voltage to the photodiode. By theoretically analyzing the characteristic parameters of MOS device at low temperature, a high gain’s feedback amplifier is devised which using a differential stage to provide the inverting gain to improve linearity and to provide tight control of the detector bias. The final chip is fabricated with HHNEC 0.35um 1P4M process technology. The measurement results of the fabricated readout chip under 50K have successfully verified both readout function and performance improvement. With the 5.0V power supply, ROIC provides the output dynamic range over 2.5V. At the same time, the total power dissipation is less than 200mW, and the maximum readout speed is more than 2.5MHz.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Li-chao Hao, Hong-lei Chen, Ai-bo Huang, Jun-ling Zhang, and Rui-jun Ding "High performance BGMI circuit for VLWIR FPAs", Proc. SPIE 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications, 89071Q (11 September 2013); https://doi.org/10.1117/12.2032760
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KEYWORDS
Readout integrated circuits

Amplifiers

Sensors

Signal to noise ratio

Infrared radiation

Modulation

Resistance

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