Vapor-liquid-solid growth of <110> silicon nanowire arrays

Sarah M. Eichfeld; Mel F. Hainey Jr.; Haoting Shen; Chito E. Kendrick; Emily A. Fucinato; Joanne Yim; Marcie R. Black; Joan M. Redwing

doi:10.1117/12.2026825

19 September 2013 Vapor-liquid-solid growth of ⟨110⟩ silicon nanowire arrays

Sarah M. Eichfeld, Mel F. Hainey Jr., Haoting Shen, Chito E. Kendrick, Emily A. Fucinato, Joanne Yim, Marcie R. Black, Joan M. Redwing

Author Affiliations +

Proceedings Volume 8820, Nanoepitaxy: Materials and Devices V; 88200I (2013) https://doi.org/10.1117/12.2026825
Event: SPIE NanoScience + Engineering, 2013, San Diego, California, United States

Abstract

The epitaxial growth of <110> silicon nanowires on (110) Si substrates by the vapor-liquid-solid growth process was investigated using SiCl₄ as the source gas. A high percentage of <110> nanowires was obtained at high temperatures and reduced SiCl₄ partial pressures. Transmission electron microscopy characterization of the <110> Si nanowires revealed symmetric V-shaped {111} facets at the tip and large {111} facets on the sidewalls of the nanowires. The symmetric {111} tip faceting was explained as arising from low catalyst supersaturation during growth which is expected to occur given the near-equilibrium nature of the SiCl₄ process. The predominance of {111} facets obtained under these conditions promotes the growth of <110> SiNWs.

Citation Download Citation

Sarah M. Eichfeld, Mel F. Hainey Jr., Haoting Shen, Chito E. Kendrick, Emily A. Fucinato, Joanne Yim, Marcie R. Black, and Joan M. Redwing "Vapor-liquid-solid growth of ⟨110⟩ silicon nanowire arrays", Proc. SPIE 8820, Nanoepitaxy: Materials and Devices V, 88200I (19 September 2013); https://doi.org/10.1117/12.2026825

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