Process-induced inhomogeneities in higher asymmetry angle x-ray monochromators

D. Korytár; P. Vagovič; C. Ferrari; P. Šiffalovič; M. Jergel; E. Dobročka; Z. Zápražný; V. Áč; P. Mikulík

doi:10.1117/12.2025142

27 September 2013 Process-induced inhomogeneities in higher asymmetry angle x-ray monochromators

D. Korytár, P. Vagovič, C. Ferrari, P. Šiffalovič, M. Jergel, E. Dobročka, Z. Zápražný, V. Áč, P. Mikulík

Proceedings Volume 8848, Advances in X-Ray/EUV Optics and Components VIII; 88480U (2013) https://doi.org/10.1117/12.2025142
Event: SPIE Optical Engineering + Applications, 2013, San Diego, California, United States

Abstract

Beam inhomogeneities of asymmetric Ge(220)-based V-shaped and single bounce monochromators have been studied both in metrological and imaging applications for photon energies around 8 keV. Presence of growth striations in graded GeSi, grains in single Cu crystal, and strains in thermally tuned V-channel monochromators observed in X-ray topographs excludes these materials from imaging applications. As for stochastic surface processing, chemomechanical polishing (CMP) produces better surface homogeneity than chemical polish. However, CMP is more difficult to be applied in V-channels, where chemical polishing is prefered. For comparison, measurements on surfaces processed by a deterministic mechanical method of single point diamond turning (SPDT) have shown SPDT to be a perspective technology. Again, to prepare deep grooves with this technique is also a challenge, mainly for tool makers. Some process induced features are observed as wavefield distortions in interference fringes.

Citation Download Citation

D. Korytár, P. Vagovič, C. Ferrari, P. Šiffalovič, M. Jergel, E. Dobročka, Z. Zápražný, V. Áč, and P. Mikulík "Process-induced inhomogeneities in higher asymmetry angle x-ray monochromators", Proc. SPIE 8848, Advances in X-Ray/EUV Optics and Components VIII, 88480U (27 September 2013); https://doi.org/10.1117/12.2025142

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