Paper
11 October 2013 Terahertz surface plasmon resonance sensor for material sensing
Daniel M. Hailu, Sondos Alqarni, Bo Cui, Daryoosh Saeedkia
Author Affiliations +
Proceedings Volume 8915, Photonics North 2013; 89151G (2013) https://doi.org/10.1117/12.2036754
Event: Photonics North 2013, 2013, Ottawa, Canada
Abstract
This paper presents the use of Terahertz (THz) SPR near-field sensor to characterize materials such as PMMA and those used in organic light emitting diode (OLED). The SPR device contains 2D periodic circular or square hole array in 500 nm Al on an 5 mm-thick intrinsic silicon, and was fabricated by photolithography and wet etching. For THz spectrum measurement, the SPR device with and without thin (PMMA) film on it is placed at the focus of the THz beam in transmission THz Time Domain Spectroscopy (TDS), where the spectrum is obtained from the Fourier-transformed sample and reference THz pulses. The transmission is obtained from the ratio between the sample spectrum and reference spectrum, whereas the phase change is the phase difference between the two spectra. To avoid overlap with water absorption lines, the optimal SPR device design has a period of 320 μm and square holes of 150 μm side length. The theoretical SPR frequencies in the THz range are determined for the metal-silicon modes and metal-air modes (0.9375 THz for mode (0, 1) at the metal-air interface). The measurement results confirmed the theoretical SPR frequencies for metal-silicon mode and demonstrate a shift to 0.9211 THz due to 2 μm of PMMA layer on the surface.
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Daniel M. Hailu, Sondos Alqarni, Bo Cui, and Daryoosh Saeedkia "Terahertz surface plasmon resonance sensor for material sensing", Proc. SPIE 8915, Photonics North 2013, 89151G (11 October 2013); https://doi.org/10.1117/12.2036754
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Cited by 1 scholarly publication.
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KEYWORDS
Terahertz radiation

Polymethylmethacrylate

Surface plasmons

Interfaces

Sensors

Silicon

Organic light emitting diodes

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