The latest developments in AlGaInN laser diode technology are reviewed for defence applications such as underwater telecommunications, sensor systems etc. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., i.e, 380nm, to the visible, i.e., 530nm, by tuning the indium content of the laser GaInN quantum well. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of >100mW in the 400-420nm wavelength range with high reliability. Visible light communications at high frequency (up to 2.5 Gbit/s) using a directly modulated 422nm Gallium-nitride (GaN) blue laser diode is reported. High power operation of AlGaInN laser diodes is also reviewed. We demonstrate the operation of a single chip, high power AlGaInN laser diode ‘mini-array’ consisting of a 3 stripe common p-contact configuration at powers up to 2.5W cw in the 408-412 nm wavelength range. Packaging of nitride laser diodes is substantially different compared to GaAs laser technology and new processes and techniques are required to optimize the optical power from a nitride laser bar. Laser bars of up to 4mm with 16 emitters have shown optical powers up to 4W cw at ~410nm with a common contact configuration. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space and/or fibre optic system integration within a very small form-factor.
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S. P. Najda ; P. Perlin ; T. Suski ; L. Marona ; M. Boćkowski, et al.
Advances in AlGaInN laser diode technology for defence applications
", Proc. SPIE 8899, Emerging Technologies in Security and Defence; and Quantum Security II; and Unmanned Sensor Systems X, 88990B (November 5, 2013); doi:10.1117/12.2028717; http://dx.doi.org/10.1117/12.2028717