Microstructuring system SiO2/Si with nanosecond pulsed fiber laser

A. M. Skvortsov; V. P. Veiko; C. T. Huynh; R. A. Khaletskiy

doi:10.1117/12.2053266

28 November 2013 Microstructuring system SiO₂/Si with nanosecond pulsed fiber laser

A. M. Skvortsov, V. P. Veiko, C. T. Huynh, R. A. Khaletskiy

Proceedings Volume 9065, Fundamentals of Laser-Assisted Micro- and Nanotechnologies 2013; 90650S (2013) https://doi.org/10.1117/12.2053266
Event: Fundamentals of Laser Assisted Micro- and Nanotechnologies 2013, 2013, St. Petersburg, Russian Federation

Abstract

The formation of morphological structures on system SiO₂/Si by pulsed ytterbium fiber laser has been investigated. The resulting structures are investigated by atomic force microscopy. It is shown that during irradiation on surface of the monocrystalline silicon wafer covered by a thin layer of thermally grown silicon dioxide (SiO₂), there are significant structural changes associated with localization on the surface of the silicon strips of slip-lines and grid of slip-line formed by the intersection of these strips. It is also shown that exposed to laser radiation in the silicon-silicon dioxide system there are structural changes that lead to the change of the electrophysical properties of SiO₂/Si system. Changes in electrophysical properties of the oxide and the interface are more observed in the area of direct exposure to the laser beam on the silicon substrate where there are maximum structural changes of the silicon surface manifested in the form of a lattice slip lines. It is found that there are laser-induced defects in areas remote from the irradiation zone.

Citation Download Citation

A. M. Skvortsov, V. P. Veiko, C. T. Huynh, and R. A. Khaletskiy "Microstructuring system SiO₂/Si with nanosecond pulsed fiber laser", Proc. SPIE 9065, Fundamentals of Laser-Assisted Micro- and Nanotechnologies 2013, 90650S (28 November 2013); https://doi.org/10.1117/12.2053266

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