Metal-oxide-semiconductor field-effect transistors operated by surface plasmon polaritons

Takuma Aihara; Ayumi Takeda; Masashi Fukuhara; Yuya Ishii; Mitsuo Fukuda

doi:10.1117/12.2033618

7 December 2013 Metal-oxide-semiconductor field-effect transistors operated by surface plasmon polaritons

Takuma Aihara, Ayumi Takeda, Masashi Fukuhara, Yuya Ishii, Mitsuo Fukuda

Proceedings Volume 8923, Micro/Nano Materials, Devices, and Systems; 89234F (2013) https://doi.org/10.1117/12.2033618
Event: SPIE Micro+Nano Materials, Devices, and Applications, 2013, Melbourne, Victoria, Australia

Abstract

The operation of a metal-oxide-semiconductor field-effect transistor (MOSFET) by a surface plasmon (SP) signal was demonstrated. The SP detector, composed of a gold/silicon Schottky diode with a nano-slit grating, was monolithically integrated with the MOSFETs on a silicon substrate. SP generation by the nano-slit gating (slit width of 100 nm, slit pitch of 440 nm, and slit depth of 300 nm) was confirmed by analytical calculations based on the finite-difference timedomain method. The SP detector operated at a photon energy (0.80 eV) that was below the bandgap energy of silicon (1.1 eV), with responsivity of 24 nA/mW and a dark current of 1.7 nA under reverse bias of 5.0 V. The photocurrent generated by the SP detector controlled the drain current of a monolithically integrated MOSFET.

Citation Download Citation

Takuma Aihara, Ayumi Takeda, Masashi Fukuhara, Yuya Ishii, and Mitsuo Fukuda "Metal-oxide-semiconductor field-effect transistors operated by surface plasmon polaritons", Proc. SPIE 8923, Micro/Nano Materials, Devices, and Systems, 89234F (7 December 2013); https://doi.org/10.1117/12.2033618

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