Paper
7 December 2013 Fabrication and replication of micro-optical structures for growth of GaN-based light emitting diodes
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Proceedings Volume 8923, Micro/Nano Materials, Devices, and Systems; 89234L (2013) https://doi.org/10.1117/12.2033709
Event: SPIE Micro+Nano Materials, Devices, and Applications, 2013, Melbourne, Victoria, Australia
Abstract
GaN light emitting diodes (LEDs) on sapphire substrates can be improved by micro-patterning substrate to perform epitaxial over-growth which drastically reduces defects' density in the light emitting region. We patterned Al2O3 with focused ion beam and show a successful overgrowth of GaN. The exact shape of pattern milled into Al2O3 was replicated into a 0.4-mm-thick shim of Ni by electroplating. The surface roughness of Ni was ~5:5 ±2 nm and is applicable for the most demanding replication of nano-rough surfaces. This technique can be used to replicate at micro-optical elements Fresnel-axicons defined by electron beam lithography made on sub-1 mm areas without stitching errors (Raith EBL). Shimming of macro-optical elements such as car back- reflectors is also demonstrated. Ni-shimming opens possibility to make replicas of nano-textured small and large area patterns and use them for thermal embossing and molding of optically-functionalized micro-fluidic chips and macro-optical elements.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G. Gervinskas, G. Seniutinas, A. Vijayakumar, S. Bhattacharya, E. Jelmakas, A. Kadys, R. Tomašiūnas, and S. Juodkazis "Fabrication and replication of micro-optical structures for growth of GaN-based light emitting diodes", Proc. SPIE 8923, Micro/Nano Materials, Devices, and Systems, 89234L (7 December 2013); https://doi.org/10.1117/12.2033709
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Cited by 2 scholarly publications.
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KEYWORDS
Nickel

Gallium nitride

Sapphire

Optical components

Light emitting diodes

Electron beam lithography

Ion beams

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