Paper
16 December 2013 Dependence of annealing temperature on microstructure and photoelectrical properties of vanadium oxide thin films prepared by DC reactive sputtering
Yan Li, Dongping Zhang, Bo Wang, Guangxing Liang, Zhuanghao Zheng, Jingting Luo, Xingmin Cai, Ping Fan
Author Affiliations +
Proceedings Volume 9068, Eighth International Conference on Thin Film Physics and Applications; 906803 (2013) https://doi.org/10.1117/12.2054097
Event: Eighth International Conference on Thin Film Physics and Applications (TFPA13), 2013, Shanghai, China
Abstract
Vanadium oxide thin films were prepared by DC reactive sputtering method, and the samples were annealed in Ar atmosphere under different temperature for 2 hours. The microstructure, optical and electrical properties of the as-grown and treated samples were characterized by XRD, spectrophotometer, and four-probe technique, respectively. XRD results investigated that the main content of the annealed sample are VO2 and V2O5. With annealing temperature increasing, the intensity of the VO2 phase diffraction peak strengthened. The electrical properties reveal that the annealed samples exhibit semiconductor-to-metal transition characteristic at about 40°C. Comparison of transmission spectra of the samples at room temperature and 100°C, a drastic drop in IR region is found.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yan Li, Dongping Zhang, Bo Wang, Guangxing Liang, Zhuanghao Zheng, Jingting Luo, Xingmin Cai, and Ping Fan "Dependence of annealing temperature on microstructure and photoelectrical properties of vanadium oxide thin films prepared by DC reactive sputtering", Proc. SPIE 9068, Eighth International Conference on Thin Film Physics and Applications, 906803 (16 December 2013); https://doi.org/10.1117/12.2054097
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KEYWORDS
Annealing

Oxides

Thin films

Vanadium

Sputter deposition

Transmittance

Crystals

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