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Proceedings Article

Defect temperature kinetics during catastrophic optical damage in high power diode lasers

[+] Author Affiliations
Martin Hempel, Jens W. Tomm

Max-Born-Institut (Germany)

Proc. SPIE 9002, Novel In-Plane Semiconductor Lasers XIII, 90021H (February 27, 2014); doi:10.1117/12.2035488
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From Conference Volume 9002

  • Novel In-Plane Semiconductor Lasers XIII
  • Alexey A. Belyanin; Peter M. Smowton
  • San Francisco, California, United States | February 01, 2014

abstract

Catastrophic optical damage (COD) is one of the limiting factors preventing diode lasers from reaching even higher optical output powers. We apply different techniques to AlGaAs/GaAs based quantum well diode lasers emitting at 808 nm in order to investigate the temperature kinetics during COD. The latter was subject to controversial discussions in the past. We experimentally verify the presence of temperatures as high as ≈1600°C at the defect front during the entire defect growth process. Locations passed by this front are affected by a rapid heating-cooling-cycle. Our results allow a deeper understanding of the mechanisms related to COD on the microscopic and macroscopic scale. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Martin Hempel and Jens W. Tomm
" Defect temperature kinetics during catastrophic optical damage in high power diode lasers ", Proc. SPIE 9002, Novel In-Plane Semiconductor Lasers XIII, 90021H (February 27, 2014); doi:10.1117/12.2035488; http://dx.doi.org/10.1117/12.2035488


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