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Proceedings Article

Phosphor-free InGaN/GaN/AlGaN core-shell dot-in-a-wire white light-emitting diodes

[+] Author Affiliations
Zetian Mi, Hieu P. T. Nguyen, Shaofei Zhang, Ashfiqua T. Connie, Md G. Kibria, Qi Wang, Ishiang Shih

McGill Univ. (Canada)

Proc. SPIE 9003, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII, 900306 (February 27, 2014); doi:10.1117/12.2041284
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From Conference Volume 9003

  • Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII
  • Klaus P. Streubel; Heonsu Jeon; Li-Wei Tu; Martin Strassburg
  • San Francisco, California, United States | February 01, 2014

abstract

We have developed phosphor-free InGaN/GaN/AlGaN dot-in-a-wire core-shell white light emitting diodes, which can break the carrier injection efficiency bottleneck of conventional nanowire white light emitting diodes, leading to a dramatic enhancement of the output power. Additionally, such phosphor-free nanowire white light emitting diodes can deliver a very high color rendering index (CRI) of ~92-98. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Zetian Mi ; Hieu P. T. Nguyen ; Shaofei Zhang ; Ashfiqua T. Connie ; Md G. Kibria, et al.
" Phosphor-free InGaN/GaN/AlGaN core-shell dot-in-a-wire white light-emitting diodes ", Proc. SPIE 9003, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII, 900306 (February 27, 2014); doi:10.1117/12.2041284; http://dx.doi.org/10.1117/12.2041284


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