Paper
28 February 2014 Polycrystaline Cr:ZnSe laser pumped by efficient Tm:YLF laser
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Abstract
Efficient generation of diode pumped Tm:YLF laser end-pumped by 25-W laser diode bar was demonstrated. Above 5 W of output power has been obtained. The output spectrum was centered at 1908-nm with <15 nm linewidth. In active Q-switching mode, for 20-Hz repetition rate, up to 5.5 mJ output energy with a pulse duration of 11 ns was achieved. Further pulse energy scaling up was limited by the damage of laser elements. The divergence angle was about 3.5 mrad and estimated parameter M2 < 1.15. We also report mid-infrared laser generation at 2488 nm with a linewidth of ~60 nm in a polycrystalline Cr:ZnSe active medium. In a free-running regime, for 80 mJ incident pump energy, 3 mJ of output pulse energy was achieved.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lukasz F. Gorajek and Jan K. Jabczynski "Polycrystaline Cr:ZnSe laser pumped by efficient Tm:YLF laser", Proc. SPIE 8959, Solid State Lasers XXIII: Technology and Devices, 89590D (28 February 2014); https://doi.org/10.1117/12.2036353
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KEYWORDS
Semiconductor lasers

Pulsed laser operation

Crystals

Diodes

Laser applications

Absorption

Laser crystals

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