High quality ZnO film formation by CO2 laser annealing of buried films in SiO2 matrix

K. Yamasaki; H. Ikenoue; T. Shimogaki; Y. Watanabe; D. Nakamura; T. Okada

doi:10.1117/12.2038762

6 March 2014 High quality ZnO film formation by CO₂ laser annealing of buried films in SiO₂ matrix

K. Yamasaki, H. Ikenoue, T. Shimogaki, Y. Watanabe, D. Nakamura, T. Okada

Proceedings Volume 8967, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XIX; 89671E (2014) https://doi.org/10.1117/12.2038762
Event: SPIE LASE, 2014, San Francisco, California, United States

Abstract

We have proposed the ZnO film annealing method using CO₂ laser. We fabricated the layered structure to enhance the annealing effect. The sample structure was SiO₂/ZnO/Quartz substrate. The ZnO film was deposited on quartz by a pulsed laser deposition and the SiO₂ film was deposited on ZnO film by physical vapor deposition. We used photoluminescence measurement to investigate the optical property of ZnO film. We found that the optical property was improved in two steps. The first step was surface passivation effect of SiO₂ coating and the second one was the annealing effect of CO₂ laser. We analyzed the fabricated film for surface state by XPS and for crystallinity by TEM measurements. The change of ZnO surface state was observed when the SiO₂ film was deposited on the ZnO film. The change of crystallinity of ZnO was observed after CO₂ laser annealing. The crystallinity of ZnO before laser annealing seemed to be polycrystal, while the crystallinity of ZnO after laser annealing seemed to be single crystal.

Citation Download Citation

K. Yamasaki, H. Ikenoue, T. Shimogaki, Y. Watanabe, D. Nakamura, and T. Okada "High quality ZnO film formation by CO₂ laser annealing of buried films in SiO₂ matrix", Proc. SPIE 8967, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XIX, 89671E (6 March 2014); https://doi.org/10.1117/12.2038762

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