Investigation of a novel approach for the cross-linking characterization of SU-8 photoresist materials by means of optical dispersion measurements

Ch. Taudt; T. Baselt; E. Koch; P. Hartmann

doi:10.1117/12.2039052

7 March 2014 Investigation of a novel approach for the cross-linking characterization of SU-8 photoresist materials by means of optical dispersion measurements

Ch. Taudt, T. Baselt, E. Koch, P. Hartmann

Author Affiliations +

Proceedings Volume 8975, Reliability, Packaging, Testing, and Characterization of MOEMS/MEMS, Nanodevices, and Nanomaterials XIII; 89750A (2014) https://doi.org/10.1117/12.2039052
Event: SPIE MOEMS-MEMS, 2014, San Francisco, California, United States

Abstract

The increase in efficiency and precision in the production of semiconductor structures under the use of polymeric materials like SU-8 is crucial in securing the technological innovation within this industry. The manufacturing of structures on wafers demands a high quality of materials, tools and production processes. In particular, deviations in the materials' parameters (e.g. cross-linking state, density or mechanical properties) could lead to subsequent problems such as a reduced lifetime of structures and systems. In particular problems during the soft and post-exposure bake process can lead to an inhomogeneous distribution of material properties. This paper describes a novel approach for the characterization of SU-8 material properties in relation to a second epoxy-based material of different cross-linking by the measurement of optical dispersion within the material. A white-light interferometer was used. In particular the setup consisted of a white-light source, a Michelson-type interferometer and a spectrometer. The investigation of the dispersion characteristics was carried out by the detection of the equalization wavelength for different positions of the reference arm in a range from 400 to 900 nm. The measured time delay due to dispersion ranges from 850 to 1050 ps/m. For evaluation purposes a 200μm SU-8 sample was characterized in the described setup regarding its dispersion characteristics in relation to bulk epoxy material. The novel measurement approach allowed a fast and high-resolution material characterization for SU-8 micro structures which was suitable for integration in production lines. The outlook takes modifications of the experimental setup regarding on-wafer measurements into account.

Citation Download Citation

Ch. Taudt, T. Baselt, E. Koch, and P. Hartmann "Investigation of a novel approach for the cross-linking characterization of SU-8 photoresist materials by means of optical dispersion measurements", Proc. SPIE 8975, Reliability, Packaging, Testing, and Characterization of MOEMS/MEMS, Nanodevices, and Nanomaterials XIII, 89750A (7 March 2014); https://doi.org/10.1117/12.2039052

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