Degradation modeling of InGaP/GaAs/Ge triple-junction solar cells irradiated by protons

S. I. Maximenko; M. P. Lumb; S. R. Messenger; R. Hoheisel; C. Affouda; D. Scheiman; M. Gonzalez; J. Lorentzen; P. P. Jenkins; R. J. Walters

doi:10.1117/12.2040938

7 March 2014 Degradation modeling of InGaP/GaAs/Ge triple-junction solar cells irradiated by protons

S. I. Maximenko, M. P. Lumb, S. R. Messenger, R. Hoheisel, C. Affouda, D. Scheiman, M. Gonzalez, J. Lorentzen, P. P. Jenkins, R. J. Walters

Author Affiliations +

Proceedings Volume 8981, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III; 89810U (2014) https://doi.org/10.1117/12.2040938
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

Experimental results on triple-junction solar cells irradiated by 3 MeV proton irradiation to very high damage levels are presented. The minority carrier transport properties were obtained through quantum efficiency and EBIC measurements and an analytical drift-diffusion solver was used in understanding the results for different degradation levels where multiple damage mechanisms are evident.

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S. I. Maximenko, M. P. Lumb, S. R. Messenger, R. Hoheisel, C. Affouda, D. Scheiman, M. Gonzalez, J. Lorentzen, P. P. Jenkins, and R. J. Walters "Degradation modeling of InGaP/GaAs/Ge triple-junction solar cells irradiated by protons", Proc. SPIE 8981, Physics, Simulation, and Photonic Engineering of Photovoltaic Devices III, 89810U (7 March 2014); https://doi.org/10.1117/12.2040938

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