Electroluminescence from ZnO nanowire-based heterojunction LED

D. Nakamura; N. Tetsuyama; T. Shimogaki; M. Higashihata; H. Ikenoue; T. Okada

doi:10.1117/12.2039705

8 March 2014 Electroluminescence from ZnO nanowire-based heterojunction LED

D. Nakamura, N. Tetsuyama, T. Shimogaki, M. Higashihata, H. Ikenoue, T. Okada

Proceedings Volume 8987, Oxide-based Materials and Devices V; 89870H (2014) https://doi.org/10.1117/12.2039705
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

We have demonstrated that fabrication of the ZnO nanowire/GaN hetero-junction light emitting diode (LED) by contacting the tip of the ZnO nanowires with the GaN film, and UV electroluminescence from the p-n junction. In this study, we fabricated the heterojunction by directly-growth of the ZnO nanowires on the GaN film using nanoparticleassisted pulsed laser deposition. Photoluminescence spectrum of the ZnO nanowires showed a weak near-band-edge ultraviolet (UV) emission and a visible broad emission, which was related to transition by ZnO defect state. We applied a selective laser irradiation to the p-n junction of the ZnO-based LED. The UV emission was strongly enhanced from the laser-irradiated p-n junction.

Citation Download Citation

D. Nakamura, N. Tetsuyama, T. Shimogaki, M. Higashihata, H. Ikenoue, and T. Okada "Electroluminescence from ZnO nanowire-based heterojunction LED", Proc. SPIE 8987, Oxide-based Materials and Devices V, 89870H (8 March 2014); https://doi.org/10.1117/12.2039705

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KEYWORDS

Zinc oxide

Nanowires

Heterojunctions

Light emitting diodes

Gallium nitride

Laser irradiation

Electroluminescence

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