Indium phosphide and associated epitaxially grown alloys is a material system of choice to make photonic integrated circuits for microwave to terahertz signal generation, processing and detection. Fabrication of laser emitters, high speed electro-optical modulators, passive waveguides and couplers, optical filters and high speed photodetectors is well mastered for discrete devices. But monolithic integration of them while maintaining good performances is a big challenge. We have demonstrated a fully integrated tunable heterodyne source designed for the generation and modulation of sub-Terahertz signals. This device is to be used for high data-rate wireless transmissions. DFB lasers, SOA amplifiers, passive waveguides, beam combiners, electro-optic modulators and high speed photodetectors have been integrated on the same InP-based platform. Millimeter wave generation at up to 120 GHz based on heterodyning the optical tones from two integrated lasers in an also integrated high bandwidth photodetector has been obtained.
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Frederic van Dijk ; Marco Lamponi ; Mourad Chtioui ; François Lelarge ; Gaël Kervella, et al.
Photonic integrated circuit on InP for millimeter wave generation
", Proc. SPIE 8988, Integrated Optics: Devices, Materials, and Technologies XVIII, 89880Q (March 8, 2014); doi:10.1117/12.2036571; http://dx.doi.org/10.1117/12.2036571