Paper
27 March 2014 Effective resist profile control
Author Affiliations +
Abstract
To meet Moore’s law, resist resolution improvement has become more and more important. However, it is difficult to improve resist resolution and keep vertical sidewall profile. For example, a high contrast hole resist may cause trench scum, due to very T-top profile. This paper reports several concepts for resist profile tuning without losing performance for lithographic factor , including mask error enhancement factor (MEEF), depth of focus (DOF), and critical dimension uniformity (CDU). To quantitative analysis the resist profile improvement, we define a new factor, Scum fail ratio (F/R%) for new techniques evaluation. The new techniques, including floatable additive, floatable PAG, and new monomer, are discussed. From X-SEM and CD-SEM data, former three concepts could improve resist sidewall profile quantitatively evaluated by Scum fail F/R% and keep lithographic factors. In addition, another key factor, resist residue defect, is also discussed. The high contrast resist with higher receding contact angle (RCA) easily generates more residue defect after development. With the new monomer composition, RCA of Resist E is decreased from 54 to 48 degree after development. Therefore, the residue defect is improved one order.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chen-Yu Liu, Chien-Wei Wang, Chun-Ching Huang, Ching-Yu Chang, and Yao-Ching Ku "Effective resist profile control", Proc. SPIE 9051, Advances in Patterning Materials and Processes XXXI, 90511Y (27 March 2014); https://doi.org/10.1117/12.2047144
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Lithography

Photomasks

Polymers

Finite element methods

Semiconducting wafers

Defect inspection

Photoresist processing

RELATED CONTENT

The E beam resist test facility performance testing and...
Proceedings of SPIE (November 08 2012)
Post-developed defect in word-line SADP process
Proceedings of SPIE (March 19 2012)
Low out-gassing organic spin-on hardmask
Proceedings of SPIE (March 26 2008)

Back to Top