Flexible power 90W to 120W ArF immersion light source for future semiconductor lithography

R. Burdt; J. Thornes; T. Duffey; T. Bibby; R. Rokitski; E. Mason; J. Melchior; T. Aggarwal; D. Haran; J. Wang; G. Rechtsteiner; M. Haviland; D. Brown

doi:10.1117/12.2048082

31 March 2014 Flexible power 90W to 120W ArF immersion light source for future semiconductor lithography

R. Burdt, J. Thornes, T. Duffey, T. Bibby, R. Rokitski, E. Mason, J. Melchior, T. Aggarwal, D. Haran, J. Wang, G. Rechtsteiner, M. Haviland, D. Brown

Author Affiliations +

Proceedings Volume 9052, Optical Microlithography XXVII; 90522K (2014) https://doi.org/10.1117/12.2048082
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

Semiconductor market demand for improved performance at lower cost continues to drive enhancements in excimer light source technologies. Increased output power, reduced variability in key light source parameters, and improved beam stability are required of the light source to support immersion lithography, multi-patterning, and 450mm wafer applications in high volume semiconductor manufacturing. To support future scanner needs, Cymer conducted a technology demonstration program to evaluate the design elements for a 120W ArFi light source. The program was based on the 90W XLR 600ix platform, and included rapid power switching between 90W and 120W modes to potentially support lot-to-lot changes in desired power. The 120W requirements also included improved beam stability in an exposure window conditionally reduced by 20%. The 120W output power is achieved by efficiency gains in system design, keeping system input power at the same level as the 90W XLR 600ix. To assess system to system variability, detailed system testing was conducted from 90W – 120W with reproducible results.

Citation Download Citation

R. Burdt, J. Thornes, T. Duffey, T. Bibby, R. Rokitski, E. Mason, J. Melchior, T. Aggarwal, D. Haran, J. Wang, G. Rechtsteiner, M. Haviland, and D. Brown "Flexible power 90W to 120W ArF immersion light source for future semiconductor lithography", Proc. SPIE 9052, Optical Microlithography XXVII, 90522K (31 March 2014); https://doi.org/10.1117/12.2048082

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available