Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers

A. Rajan; S. Sundaram; Y. El Gmili; P. L. Voss; K. Pantzas; T. Moudakir; A. Ougazzaden; D. J. Rogers; F. Hosseini Teherani; V. E. Sandana; P. Bove; K. Prior; R. McClintock; M. Razeghi

doi:10.1117/12.2043704

2 April 2014 Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers

A. Rajan, S. Sundaram, Y. El Gmili, P. L. Voss, K. Pantzas, T. Moudakir, A. Ougazzaden, D. J. Rogers, F. Hosseini Teherani, V. E. Sandana, P. Bove, K. Prior, R. McClintock, M. Razeghi

Author Affiliations +

Proceedings Volume 8987, Oxide-based Materials and Devices V; 898719 (2014) https://doi.org/10.1117/12.2043704
Event: SPIE OPTO, 2014, San Francisco, California, United States

Abstract

Free-standing (0002)-oriented GaN substrates (φ = 2”) were coated with 200 nm of ZnO and used as templates for the growth of GaN thin films. SEM and AFM revealed that such GaN layers had a relatively homogenous surface morphology with an RMS roughness (5 μm x 5 μm) of less than 4nm. XRD studies revealed strained ZnO growth on the GaN substrate and the reproduction of the substrate rocking curve for the GaN overlayers after only a hundred nm of growth, thus indicating that the GaN films had superior crystallographic quality compared to those grown on sapphire or ZnO/sapphire substrates. Quarter-wafer areas of GaN were removed from the GaN substrate (by selective chemical etching away of the ZnO interlayer). The expensive GaN substrates were then reclaimed/reused (without the need for polishing) for a second cycle of ZnO and GaN growth, which gave similar XRD, SEM, CL and AFM results to the first cycle.

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A. Rajan, S. Sundaram, Y. El Gmili, P. L. Voss, K. Pantzas, T. Moudakir, A. Ougazzaden, D. J. Rogers, F. Hosseini Teherani, V. E. Sandana, P. Bove, K. Prior, R. McClintock, and M. Razeghi "Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers", Proc. SPIE 8987, Oxide-based Materials and Devices V, 898719 (2 April 2014); https://doi.org/10.1117/12.2043704

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