Paper
2 May 2014 Small linewidths 76× nm DFB-laser diodes with optimised two-step epitaxial gratings
O. Brox, Frank Bugge, A. Mogilatenko, E. Luvsandamdin, A. Wicht, H. Wenzel, G. Erbert
Author Affiliations +
Abstract
We present DFB laser diodes emitting in the 76x nm wavelengths range and focus on design and fabrication of the integrated Bragg gratings. Grating functionality is obtained with a periodically patterned GaAs0.75P0.25 layer with a thickness of 13 nm. We applied scanning transmission electron microscopy using a high angle annular dark-field detector for the analysis of the buried grating structures and for the improvement of the etching and regrowth conditions. Ridge waveguide DFB lasers with optimized gratings and production process show single mode emission with intrinsic linewidths below 10 kHz. Coated 1.5 mm long ridge waveguide DFB lasers emit stable over 5000 hours at a constant power of 100 mW.
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O. Brox, Frank Bugge, A. Mogilatenko, E. Luvsandamdin, A. Wicht, H. Wenzel, and G. Erbert "Small linewidths 76× nm DFB-laser diodes with optimised two-step epitaxial gratings", Proc. SPIE 9134, Semiconductor Lasers and Laser Dynamics VI, 91340P (2 May 2014); https://doi.org/10.1117/12.2052914
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Cited by 4 scholarly publications.
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KEYWORDS
Etching

Scanning transmission electron microscopy

Indium gallium phosphide

Cladding

Semiconductor lasers

Waveguides

Interfaces

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