T-ray detection in 0.35-um CMOS technology

Gregory J. Fertig; Zoran Ninkov; Mark F. Bocko; Jagannath Dayalu; Kenny D. Fourspring; Zeljko Ignjatovic; Paul P. K. Lee; Craig W. McMurtry; J. Daniel Newman; Judith L. Pipher; Andrew P. Sacco; Chao Zhang

doi:10.1117/12.2050754

21 May 2014 T-ray detection in 0.35-μm CMOS technology

Gregory J. Fertig, Zoran Ninkov, Mark F. Bocko, Jagannath Dayalu, Kenny D. Fourspring, Zeljko Ignjatovic, Paul P. K. Lee, Craig W. McMurtry, J. Daniel Newman, Judith L. Pipher, Andrew P. Sacco, Chao Zhang

Author Affiliations +

Proceedings Volume 9102, Terahertz Physics, Devices, and Systems VIII: Advanced Applications in Industry and Defense; 91020P (2014) https://doi.org/10.1117/12.2050754
Event: SPIE Sensing Technology + Applications, 2014, Baltimore, MD, United States

Abstract

Interest in array based imaging of terahertz energy (T-Rays) has gained traction lately, specifically using a CMOS process due to its ease of manufacturability and the use of MOSFETs as a detection mechanism. Incident terahertz radiation on to the gate channel region of a MOSFET can be related to plasmonic response waves which change the electron density and potential across the channel. The 0.35 μm silicon CMOS MOSFETs tested in this work contain varying structures, providing a range of detectors to analyze. Included are individual test transistors for which various operating parameters and modes are studied and results presented. A focus on single transistor-antenna testing provides a path for discovering the most efficient combination for coupling 0.2 THz band energy. An evaluation of fabricated terahertz band test detection MOSFETs is conducted. Sensitivity analysis and responsivity are described, in parallel with theoretical expectations of the plasmonic response in room temperature conditions. A maximum responsivity of 40 000 V/W and corresponding NEP of 10 pW/Hz^1/2 (±10% uncertainty) is achieved.

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Gregory J. Fertig, Zoran Ninkov, Mark F. Bocko, Jagannath Dayalu, Kenny D. Fourspring, Zeljko Ignjatovic, Paul P. K. Lee, Craig W. McMurtry, J. Daniel Newman, Judith L. Pipher, Andrew P. Sacco, and Chao Zhang "T-ray detection in 0.35-μm CMOS technology", Proc. SPIE 9102, Terahertz Physics, Devices, and Systems VIII: Advanced Applications in Industry and Defense, 91020P (21 May 2014); https://doi.org/10.1117/12.2050754

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KEYWORDS

Field effect transistors

Transistors

Camera shutters

Resistance

Terahertz radiation

CMOS sensors

Imaging systems

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