Latest developments in the p-on-n HgCdTe architecture at DEFIR

P. Castelein; N. Baier; O. Gravrand; L. Mollard; D. Brellier; F. Rochette; A. Kerlain; L. Rubaldo; Y. Reibel; G. Destefanis

doi:10.1117/12.2054023

24 June 2014 Latest developments in the p-on-n HgCdTe architecture at DEFIR

P. Castelein, N. Baier, O. Gravrand, L. Mollard, D. Brellier, F. Rochette, A. Kerlain, L. Rubaldo, Y. Reibel, G. Destefanis

Author Affiliations +

Proceedings Volume 9070, Infrared Technology and Applications XL; 90702Y (2014) https://doi.org/10.1117/12.2054023
Event: SPIE Defense + Security, 2014, Baltimore, MD, United States

Abstract

Since 2005, in the scope of “DEFIR”, the joint laboratory between CEA-LETI and SOFRADIR, p-on-n photodiodes and FPAs (Focal Plane Arrays) have been developed and optimised. This p-on-n architecture, obtained by As implantation into an In doped base layer, offered a significant decrease of the dark current compared to our n-on-p standard architecture. Following these developments, this p-on-n technology has been successfully transferred to SOFRADIR for industrial production [1]. Results obtained on TV format, 15μm pitch, showed that this first architecture has reached its maturity with excellent results in LWIR and MWIR. In parallel, further developments and studies are still in progress at CEA-LETI in order to improve the photodiode performance and understanding of the physical mechanisms. In this way, new p-on-n architectures have been studied on LPE (Liquid Phase Epitaxy) in the VLWIR spectral band. Using this new architecture, the transition temperature, where the dark current shifts from diffusion limited regime to another one, has been lowered by more than 10K. Extremely low dark current has been obtained, down to 50 e-/s/pixel. The p-on-n technology also been studied at DEFIR in SWIR range specifically for space applications were 2Kx2K MCT arrays are required with dark current below 0.01e-/s at 18μm pitch in the 80-140 K. Finally in the MWIR and LWIR spectral bands, the reduction of production cost and the increase of resolution call for smaller pixel pitches with larger format. In this way, first results have been obtained on test diodes with pixel pitch as low as 5 μm. The I(V) and R(V) plots illustrate the very good characteristic of our p-on-n diodes. These photodiodes present large reverse breakdown voltage, witnessing the quality of our device fabrication procedure.

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P. Castelein, N. Baier, O. Gravrand, L. Mollard, D. Brellier, F. Rochette, A. Kerlain, L. Rubaldo, Y. Reibel, and G. Destefanis "Latest developments in the p-on-n HgCdTe architecture at DEFIR", Proc. SPIE 9070, Infrared Technology and Applications XL, 90702Y (24 June 2014); https://doi.org/10.1117/12.2054023

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