In next generation lithography (NGL) for the 1x nm node and beyond, the three dimensional (3D) shape measurements such as side wall angle (SWA) and height of feature on photomask become more critical for the process control. Until today, AFM (Atomic Force Microscope), X-SEM (cross-section Scanning Electron Microscope) and TEM (Transmission Electron Microscope) tools are normally used for 3D measurements, however, these techniques require time-consuming preparation and observation. And both X-SEM and TEM are destructive measurement techniques. This paper presents a technology for quick and non-destructive 3D shape analysis using multi-channel detector MVM-SEM (Multi Vision Metrology SEM), and also reports its accuracy and precision.
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Makoto Yoshikawa ; Sumito Harada ; Keisuke Ito ; Tsutomu Murakawa ; Soichi Shida, et al.
Three dimensional profile measurement using multi-channel detector MVM-SEM
", Proc. SPIE 9256, Photomask and Next-Generation Lithography Mask Technology XXI, 92560G (July 28, 2014); doi:10.1117/12.2064944; http://dx.doi.org/10.1117/12.2064944