Etched multilayer mask is better than conventional absorber mask

Guk-Jin Kim; Hye-Keun Oh; In-Seon Kim; Michael Yeung; Eytan Barouch

doi:10.1117/12.2069885

28 July 2014 Etched multilayer mask is better than conventional absorber mask

Guk-Jin Kim, Hye-Keun Oh, In-Seon Kim, Michael Yeung, Eytan Barouch

Proceedings Volume 9256, Photomask and Next-Generation Lithography Mask Technology XXI; 92560R (2014) https://doi.org/10.1117/12.2069885
Event: Photomask Japan 2014, 2014, Yokohama, Japan

Abstract

The main problem in extreme ultra-violet (EUV) lithography for mass production is low source power. In order to overcome this problem, we suggest to use an etched multilayer mask introduced several years ago. The etched multilayer mask structure does not need an absorber stack and it was found that we could get higher aerial image slope and peak intensity than those of the conventional absorber mask structure. Also, the etched multilayer mask can reduce the pattern shift and horizontal-vertical (H-V) bias.

Citation Download Citation

Guk-Jin Kim, Hye-Keun Oh, In-Seon Kim, Michael Yeung, and Eytan Barouch "Etched multilayer mask is better than conventional absorber mask", Proc. SPIE 9256, Photomask and Next-Generation Lithography Mask Technology XXI, 92560R (28 July 2014); https://doi.org/10.1117/12.2069885

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