Status and outlook of STT-MRAM development

T. Min; G. S. Kar; J. Swerts; S. Mertens; S. Coseman; J. Bekaert; K. Xu; L. Souriau; D. Radisic; H. Okuyama; K. Nishimura; T. Seino; K. Tsunekawa

doi:10.1117/12.2063079

28 August 2014 Status and outlook of STT-MRAM development

T. Min, G. S. Kar, J. Swerts, S. Mertens, S. Coseman, J. Bekaert, K. Xu, L. Souriau, D. Radisic, H. Okuyama, K. Nishimura, T. Seino, K. Tsunekawa

Author Affiliations +

Proceedings Volume 9167, Spintronics VII; 91671B (2014) https://doi.org/10.1117/12.2063079
Event: SPIE NanoScience + Engineering, 2014, San Diego, California, United States

Abstract

MTJ stack is optimized for TMR at low RA region, high PMA and 400oC post annealing capability. Atomic level smooth bottom electrode with 0.5A roughness was developed and positive effects on annealing capability and PMA was demonstrated. The scaling challenge of STT-MRAM read operation down to sub-10nm is discussed. Various contributing factors to the MTJ cell resistance variation were investigated with focus on MRAM cell variation due to advanced lithography patterning techniques. With SADP or DSA, the MRAM cell size can be scaled down to 18nm physical dimension with 4.2% σ/μ cell area variation, good enough for sub-10nm technology node.

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T. Min, G. S. Kar, J. Swerts, S. Mertens, S. Coseman, J. Bekaert, K. Xu, L. Souriau, D. Radisic, H. Okuyama, K. Nishimura, T. Seino, and K. Tsunekawa "Status and outlook of STT-MRAM development", Proc. SPIE 9167, Spintronics VII, 91671B (28 August 2014); https://doi.org/10.1117/12.2063079

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