High-sensitivity silicon nanowire phototransistors

Siew Li Tan; Xingyan Zhao; Yaping Dan

doi:10.1117/12.2061190

28 August 2014 High-sensitivity silicon nanowire phototransistors

Siew Li Tan, Xingyan Zhao, Yaping Dan

Proceedings Volume 9170, Nanoengineering: Fabrication, Properties, Optics, and Devices XI; 917002 (2014) https://doi.org/10.1117/12.2061190
Event: SPIE NanoScience + Engineering, 2014, San Diego, California, United States

Abstract

Silicon nanowires (SiNWs) have emerged as a promising material for high-sensitivity photodetection in the UV, visible and near-infrared spectral ranges. In this work, we demonstrate novel planar SiNW phototransistors on silicon-oninsulator (SOI) substrate using CMOS-compatible processes. The device consists of a bipolar transistor structure with an optically-injected base region. The electronic and optical properties of the SiNW phototransistors are investigated. Preliminary simulation and experimental results show that nanowire geometry, doping densities and surface states have considerable effects on the device performance, and that a device with optimized parameters can potentially outperform conventional Si photodetectors.

Citation Download Citation

Siew Li Tan, Xingyan Zhao, and Yaping Dan "High-sensitivity silicon nanowire phototransistors", Proc. SPIE 9170, Nanoengineering: Fabrication, Properties, Optics, and Devices XI, 917002 (28 August 2014); https://doi.org/10.1117/12.2061190

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