The low-frequency Raman spectra and nanostructure of As-Se-S and As-Se-Te chalcogenide semiconductors doped by samarium

G. A. Isayeva; R. I. Alekberov; S. I. Mekhtiyeva; A. I. Isayev

doi:10.1117/12.2060358

5 September 2014 The low-frequency Raman spectra and nanostructure of As-Se-S and As-Se-Te chalcogenide semiconductors doped by samarium

G. A. Isayeva, R. I. Alekberov, S. I. Mekhtiyeva, A. I. Isayev

Author Affiliations +

Proceedings Volume 9205, Reflection, Scattering, and Diffraction from Surfaces IV; 92050C (2014) https://doi.org/10.1117/12.2060358
Event: SPIE Optical Engineering + Applications, 2014, San Diego, California, United States

Abstract

It has been established that the Raman scattering (RS) of chalcogenide glass–like semiconductors (CGS) materials As-Se-S and As-Se-Te at frequencies below 100 cm^-1 consists of two parts: first - which the intensity with increasing frequency up to 30 ÷ 40 cm^-1decreases (quasi-elastic scattering); second - which have been observed a broad band with a maximum at frequencies of ~ 63 ÷ 67 cm-1 (boson peak - BP). Such a case is absent in the respective crystals. The observed features are associated with relaxation and excess density of states of acoustic vibrations in irregularities is localized with nanometer-size of material. It is shown that the contribution of the different types of scattering in a low-frequency range depends on the degree of disorder in the material, which varies with the change of chemical composition and by doping.

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G. A. Isayeva, R. I. Alekberov, S. I. Mekhtiyeva, and A. I. Isayev "The low-frequency Raman spectra and nanostructure of As-Se-S and As-Se-Te chalcogenide semiconductors doped by samarium", Proc. SPIE 9205, Reflection, Scattering, and Diffraction from Surfaces IV, 92050C (5 September 2014); https://doi.org/10.1117/12.2060358

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