Full Content is available to subscribers

Subscribe/Learn More  >
Proceedings Article

Intra-field CDU map correlation between SEMs and aerial image characterization

[+] Author Affiliations
Guoxiang Ning, Lloyd C. Litt, Paul Ackmann

GLOBALFOUNDRIES Inc. (United States)

Peter Philipp, Stefan Meusemann, Martin Tschinkl

Advanced Mask Technology Ctr. GmbH & Co. KG (Germany)

Thomas Thaler, Kristian Schulz

Carl Zeiss SMS GmbH (Germany)

Proc. SPIE 9235, Photomask Technology 2014, 92350I (September 16, 2014); doi:10.1117/12.2066173
Text Size: A A A
From Conference Volume 9235

  • Photomask Technology 2014
  • Paul W. Ackmann; Naoya Hayashi
  • Monterey, California, United States | September 16, 2014

abstract

Reticle critical dimension uniformity (CDU) is one of the major sources of wafer CD variations which include both inter-field variations and intra-field variations. Generally, wafer critical dimension (CD) measurement sample size interfield is much less than intra-field. Intra-field CDU correction requires time-consumption of metrology. In order to improve wafer intra-field CDU, several methods can be applied such as intra-field dose correction to improve wafer intra-field CDU. Corrections can be based on CD(SEM) or aerial image metrology data from the reticle. Reticle CDU and wafer CDU maps are based on scanning electron microscope (SEM) metrology, while reticle inspection intensity mapping (NuFLare 6000) and wafer level critical dimension (WLCD) utilize aerial images or optical techniques. Reticle inspecton tools such as those from KLA and NuFlare, offer the ability to collect optical measurement data to produce an optical CDU map. WLCD of Zeiss has the advantage of using the same illumination condition as the scanner to measure the aerial images or optical CD. In this study, the intra-field wafer CDU map correlation between SEMs and aerial images are characterized. The layout of metrology structures is very important for the correlation between wafer intra-field CDU, measured by SEM, and the CDU determined by aerial images. The selection of metrology structures effects on the correlation to SEM CD to wafer is also demonstrated. Both reticle CDU, intensity CDU and WLCD are candidates for intra-field wafer CDU characterization and the advantages and limitations of each approach are discussed. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation

Guoxiang Ning ; Peter Philipp ; Lloyd C. Litt ; Stefan Meusemann ; Thomas Thaler, et al.
" Intra-field CDU map correlation between SEMs and aerial image characterization ", Proc. SPIE 9235, Photomask Technology 2014, 92350I (September 16, 2014); doi:10.1117/12.2066173; http://dx.doi.org/10.1117/12.2066173


Access This Proceeding
Sign in or Create a personal account to Buy this proceeding ($15 for members, $18 for non-members).

Figures

Tables

NOTE:
Citing articles are presented as examples only. In non-demo SCM6 implementation, integration with CrossRef’s "Cited By" API will populate this tab (http://www.crossref.org/citedby.html).

Some tools below are only available to our subscribers or users with an online account.

Related Content

Customize your page view by dragging & repositioning the boxes below.

Related Book Chapters

Topic Collections

Advertisement
  • Don't have an account?
  • Subscribe to the SPIE Digital Library
  • Create a FREE account to sign up for Digital Library content alerts and gain access to institutional subscriptions remotely.
Access This Proceeding
Sign in or Create a personal account to Buy this proceeding ($15 for members, $18 for non-members).
Access This Proceeding
Sign in or Create a personal account to Buy this article ($15 for members, $18 for non-members).
Access This Chapter

Access to SPIE eBooks is limited to subscribing institutions and is not available as part of a personal subscription. Print or electronic versions of individual SPIE books may be purchased via SPIE.org.