Direct band gap wurtzite GaP nanowires for LEDs and quantum devices

S. Assali; D. Kriegner; I. Zardo; S. Plissard; M. A. Verheijen; J. Stangl; J. E. M. Haverkort; E. P. A. M. Bakkers

doi:10.1117/12.2063865

16 September 2014 Direct band gap wurtzite GaP nanowires for LEDs and quantum devices

S. Assali, D. Kriegner, I. Zardo, S. Plissard, M. A. Verheijen, J. Stangl, J. E. M. Haverkort, E. P. A. M. Bakkers

Proceedings Volume 9174, Nanoepitaxy: Materials and Devices VI; 917405 (2014) https://doi.org/10.1117/12.2063865
Event: SPIE NanoScience + Engineering, 2014, San Diego, California, United States

Abstract

Commercially available light-emitting diodes (LEDs) suffer from low-efficiency in the green region of the visible spectrum. In order to solve this issue III-V materials such as Gallium phosphide (GaP) can be investigated. GaP in the zinc blende (ZB) crystal structure has an indirect band gap, limiting the efficiency of the green emission. However, when the material is grown with wurtzite (WZ) crystal phase a direct band gap is predicted. Here, we show the fabrication and the characterization of wurtzite GaP nanowires, together with the demonstration of the direct band gap. The strong photoluminescence signal observed at 594 nm with a lifetime in the order of 1ns matches with the expectation for a direct band gap material. Furthermore, the emission wavelength can be tuned across a wide range of the visible spectrum (555−690 nm) by incorporating aluminum or arsenic in the WZ GaP nanowires.

Citation Download Citation

S. Assali, D. Kriegner, I. Zardo, S. Plissard, M. A. Verheijen, J. Stangl, J. E. M. Haverkort, and E. P. A. M. Bakkers "Direct band gap wurtzite GaP nanowires for LEDs and quantum devices", Proc. SPIE 9174, Nanoepitaxy: Materials and Devices VI, 917405 (16 September 2014); https://doi.org/10.1117/12.2063865

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