Metalorganic chemical vapor deposition of Bi2Se3 thin films for topological insulator applications

Joseph E. Brom; Joan M. Redwing

doi:10.1117/12.2065151

16 September 2014 Metalorganic chemical vapor deposition of Bi₂Se₃ thin films for topological insulator applications

Joseph E. Brom, Joan M. Redwing

Proceedings Volume 9174, Nanoepitaxy: Materials and Devices VI; 91740H (2014) https://doi.org/10.1117/12.2065151
Event: SPIE NanoScience + Engineering, 2014, San Diego, California, United States

Abstract

The growth of thin Bi₂Se₃ films on (0001) sapphire substrates by metalorganic chemical vapor deposition (MOCVD) was investigated. A two-heater configuration was employed to pre-crack the metalorganic sources upstream of the substrate while maintaining a low substrate temperature (<250°C). Epitaxial Bi₂Se₃ films with (006) x-ray rocking curve full-width-at-half-maximum values on the order of 160 arcsecs were obtained at growth rates of ~6 nm/min or lower while higher growth rates resulted in polycrystalline films. The background electron concentration of the films was found to depend strongly on the substrate temperature and Se/Bi inlet ratio. Bi₂Se₃ films with a room temperature electron concentration of 6.7x10¹⁹ cm^-3 and mobility of 155 cm²/Vs were obtained at 200°C with a Se/Bi ratio of 80. Higher substrate temperature and lower Se/Bi ratios resulted in an increase in electron concentration and corresponding reduction in mobility. The results demonstrate the potential of MOCVD for the growth of Bi₂Se₃ and related materials for topological insulator studies.

Citation Download Citation

Joseph E. Brom and Joan M. Redwing "Metalorganic chemical vapor deposition of Bi₂Se₃ thin films for topological insulator applications", Proc. SPIE 9174, Nanoepitaxy: Materials and Devices VI, 91740H (16 September 2014); https://doi.org/10.1117/12.2065151

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