Growth control of Ga(As)Sb quantum dots (QD) on GaAs with reflectance anisotropy spectroscopy (RAS)

Johannes H. Strassner; Johannes Richter; Thomas H. Loeber; Henning Fouckhardt

doi:10.1117/12.2074530

25 September 2014 Growth control of Ga(As)Sb quantum dots (QD) on GaAs with reflectance anisotropy spectroscopy (RAS)

Johannes H. Strassner, Johannes Richter, Thomas H. Loeber, Henning Fouckhardt

Proceedings Volume 9288, Photonics North 2014; 92880F (2014) https://doi.org/10.1117/12.2074530
Event: Photonics North 2014, 2014, Montréal, Canada

Abstract

Ga(As)Sb quantum dots (QDs) are grown on GaAs substrate in the Stranski-Krastanov mode. The molecular beam epitaxial (MBE) growth is monitored by reflectance anisotropy spectroscopy (RAS). For certain photon energies of the light used for RAS, the RAS signal values for GaAs layers, GaSb layers, and Ga(As)Sb QD surface morphologies can clearly be distinguished. The finding verifies that RAS is a valuable tool to identify growth of these QDs.

Citation Download Citation

Johannes H. Strassner, Johannes Richter, Thomas H. Loeber, and Henning Fouckhardt "Growth control of Ga(As)Sb quantum dots (QD) on GaAs with reflectance anisotropy spectroscopy (RAS)", Proc. SPIE 9288, Photonics North 2014, 92880F (25 September 2014); https://doi.org/10.1117/12.2074530

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