Photoinduced GRIN lens formation in chalcogenide Ge-As-S thin films

K. Palanjyan; R. Vallée; T. Galstian

doi:10.1117/12.2075129

25 September 2014 Photoinduced GRIN lens formation in chalcogenide Ge-As-S thin films

K. Palanjyan, R. Vallée, T. Galstian

Proceedings Volume 9288, Photonics North 2014; 92880L (2014) https://doi.org/10.1117/12.2075129
Event: Photonics North 2014, 2014, Montréal, Canada

Abstract

We describe the photo induced formation of gradient index (GRIN) lenses in thin films of chalcogenide glass (ChG) of Ge₂₅As₃₀S₄₅ composition. We examine the changes of thickness of these samples by DekTak profilometry, as well as the optical performance and wave front distortions of the obtained lenses by using a Shack Hartmann sensor. The GRIN formation is related to the photo induced shift of the band gap towards shorter wavelengths (so-called photo-bleaching effect). The corresponding photo-induced birefringence of this material is in the origin of anisotropic GRIN lenses formed [1].

Citation Download Citation

K. Palanjyan, R. Vallée, and T. Galstian "Photoinduced GRIN lens formation in chalcogenide Ge-As-S thin films", Proc. SPIE 9288, Photonics North 2014, 92880L (25 September 2014); https://doi.org/10.1117/12.2075129

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