Bright coppertunities: efficient OLED devices with copper(I)iodide-NHetPHOS-emitters

Manuela Wallesch; Daniel Volz; Charlotte Fléchon; Daniel M. Zink; Stefan Bräse; Thomas Baumann

doi:10.1117/12.2060499

8 October 2014 Bright coppertunities: efficient OLED devices with copper(I)iodide-NHetPHOS-emitters

Manuela Wallesch, Daniel Volz, Charlotte Fléchon, Daniel M. Zink, Stefan Bräse, Thomas Baumann

Proceedings Volume 9183, Organic Light Emitting Materials and Devices XVIII; 918309 (2014) https://doi.org/10.1117/12.2060499
Event: SPIE Organic Photonics + Electronics, 2014, San Diego, California, United States

Abstract

The mass market application of OLEDs is currently hindered because i) the materials are too expensive and contain rare metals such as iridium and ii) current processing techniques are elaborate and cannot easily be up-scaled. Solution processable Cu(I)-complexes promise to solve both problems with one blow: Copper is an abundant metal, which offers new opportunities to develop materials for OLEDs. Due to their structural diversity, Cu(I) emitters allow for the design of materials with tunable properties. Beside this, it is also possible to adjust solution properties and introduce functionalities for cross-linking. The new materials feature exciting photophysical properties such as PLQY values close to unity and a tunable emission. The emission decay times are in the range of common emitters or lower, which is expected to reduce efficiency roll-off at high driving voltages. Cu(I)-complexes often feature thermally-activated delayed fluorescence (TADF). As a consequence, they can make use of triplet and singlet excitons in a process called Singlet Harvesting, which paves the way for high efficiencies. Unlike Ir(III)-complexes such as Irppy₃, triplet-triplet annihilation does not occur when using Cu(I), even in very high doping concentrations. The feasibility of NHetPHOS-type Cu(I)-complexes is demonstrated as well as strategies that enable a smart crosslinking process, where the Cu(I) emitters themselves play an important role. In addition, high-brightness devices, which were operated at medium voltages, yielding 50.000 cd m^-2 are shown. In a showcase example, we recently presented a device with an external quantum efficiency greater than 20% with a solution processed Cu(I)-PyrPHOS-device without using outcoupling techniques.

Citation Download Citation

Manuela Wallesch, Daniel Volz, Charlotte Fléchon, Daniel M. Zink, Stefan Bräse, and Thomas Baumann "Bright coppertunities: efficient OLED devices with copper(I)iodide-NHetPHOS-emitters", Proc. SPIE 9183, Organic Light Emitting Materials and Devices XVIII, 918309 (8 October 2014); https://doi.org/10.1117/12.2060499

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