Paper
17 October 2014 Reticles, write time, and the need for speed
Author Affiliations +
Proceedings Volume 9231, 30th European Mask and Lithography Conference; 923106 (2014) https://doi.org/10.1117/12.2076771
Event: 30th European Mask and Lithography Conference, 2014, Dresden, Germany
Abstract
Historical data indicates reticle write times are increasing node-to-node. The cost of mask sets is increasing driven by the tighter requirements and more levels. The regular introduction of new generations of mask patterning tools with improved performance is unable to fully compensate for the increased data and complexity required. Write time is a primary metric that drives mask fabrication speed. Design (Raw data) is only the first step in the process and many interactions between mask and wafer technology such as OPC used, OPC efficiency for writers, fracture engines, and actual field size used drive total write time. Yield, technology, and inspection rules drive the remaining raw cycle time. Yield can be even more critical for speed of delivery as it drives re-writes and wasted time. While intrinsic process yield is important, repair capability is the reason mask delivery is still able to deliver 100% good reticles to the fab. Advanced nodes utilizing several layers of multiple patterning may require mask writer tool dedication to meet image placement specifications. This will increase the effective mask cycle time for a layer mask set and drive the need for additional mask write capability in order to deliver masks at the rate required by the wafer fab production schedules.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul W. Ackmann, Lloyd C. Litt, and Guo Xiang Ning "Reticles, write time, and the need for speed", Proc. SPIE 9231, 30th European Mask and Lithography Conference, 923106 (17 October 2014); https://doi.org/10.1117/12.2076771
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KEYWORDS
Photomasks

Reticles

Semiconducting wafers

Inspection

Optical lithography

Optical proximity correction

Lawrencium

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