Tunable V-coupled-cavity semiconductor laser monolithically integrated with monitoring photodiodes using deeply etched reflective trenches

Xiaolu Liao; Jianjun Meng; Jian-Jun He

doi:10.1117/12.2073603

3 December 2014 Tunable V-coupled-cavity semiconductor laser monolithically integrated with monitoring photodiodes using deeply etched reflective trenches

Xiaolu Liao, Jianjun Meng, Jian-Jun He

Author Affiliations +

Proceedings Volume 9267, Semiconductor Lasers and Applications VI; 926715 (2014) https://doi.org/10.1117/12.2073603
Event: SPIE/COS Photonics Asia, 2014, Beijing, China

Abstract

We present a 1560-nm-band digitally wavelength tunable V-coupled-cavity semiconductor laser monolithically integrated with two waveguides based monitoring photodiodes (MPD) through deeply etched reflective trenches. The reflective trenches are designed to be 1.16μm wide, about three quarters of the wavelength, and are deeply etched through the waveguide with a depth larger than 4μm. Due to the high reflectivity of the etched trenches, a low threshold current of 19mA is achieved. Using a single electrode control, wavelength tuning of 22 channels at 100GHz spacing with SMSR above 35 dB is obtained. The relationship between the photocurrents of the two MPD at the two waveguide branches and the laser output power from the coupler side is investigated as a function of the wavelength. Since the integrated tunable laser with MPDs is very compact and does not involve any grating or epitaxial regrowth, it is suitable for low-cost multifunctional photonic applications for access and data center networks.

Citation Download Citation

Xiaolu Liao, Jianjun Meng, and Jian-Jun He "Tunable V-coupled-cavity semiconductor laser monolithically integrated with monitoring photodiodes using deeply etched reflective trenches", Proc. SPIE 9267, Semiconductor Lasers and Applications VI, 926715 (3 December 2014); https://doi.org/10.1117/12.2073603

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