Electrical properties of ALD HfO2 (EOT 0.47 nm)

A. Molchanova; A. Rogozhin

doi:10.1117/12.2181009

18 December 2014 Electrical properties of ALD HfO₂ (EOT 0.47 nm)

A. Molchanova, A. Rogozhin

Proceedings Volume 9440, International Conference on Micro- and Nano-Electronics 2014; 944004 (2014) https://doi.org/10.1117/12.2181009
Event: The International Conference on Micro- and Nano-Electronics 2014, 2014, Zvenigorod, Russian Federation

Abstract

The electric properties of the dielectric stack based hafnium were characterized by C-V and I-V curves before and after annealing. The lowest equivalent oxide thickness (EOT) was obtained after PMA and equals to 0.47 nm. The leakage current for this sample at 1V gate voltage was about 10 A/cm². Charge density in the volume of high-k was extremely high (1.61·10¹⁸ cm^-3). Obtained density of interface charge is equal to moderate value 1.03·10¹²cm^-2.

Citation Download Citation

A. Molchanova and A. Rogozhin "Electrical properties of ALD HfO₂ (EOT 0.47 nm)", Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 944004 (18 December 2014); https://doi.org/10.1117/12.2181009

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available