High-temperature single-electron transistor based on a gold nanoparticle

S. A. Dagesyan; A. S. Stepanov; E. S. Soldatov; G. Zharik

doi:10.1117/12.2181137

18 December 2014 High-temperature single-electron transistor based on a gold nanoparticle

S. A. Dagesyan, A. S. Stepanov, E. S. Soldatov, G. Zharik

Proceedings Volume 9440, International Conference on Micro- and Nano-Electronics 2014; 94400P (2014) https://doi.org/10.1117/12.2181137
Event: The International Conference on Micro- and Nano-Electronics 2014, 2014, Zvenigorod, Russian Federation

Abstract

Molecular single-electron transistors based on small (2 - 4 nm) gold nanoparticles were fabricated using an electronbeam lithography and the electromigration method. Electrical characteristics of the obtained transistors were measured at 77 and 300 K. The characteristics show that the regime of a correlated tunneling of electrons was realized at these high for the process temperatures.

Citation Download Citation

S. A. Dagesyan, A. S. Stepanov, E. S. Soldatov, and G. Zharik "High-temperature single-electron transistor based on a gold nanoparticle", Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 94400P (18 December 2014); https://doi.org/10.1117/12.2181137

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