Defect formation energy  for charge states and electrophysical properties of  CdMnTe

M. A. Mehrabova; H. R. Nuriyev; H. S. Orujov; A. M. Nazarov; R. M. Sadigov; V. N. Poladova

doi:10.1117/12.2073343

6 January 2015 Defect formation energy for charge states and electrophysical properties of CdMnTe

M. A. Mehrabova, H. R. Nuriyev, H. S. Orujov, A. M. Nazarov, R. M. Sadigov, V. N. Poladova

Proceedings Volume 9450, Photonics, Devices, and Systems VI; 94500Q (2015) https://doi.org/10.1117/12.2073343
Event: Photonics Prague 2014, 2014, Prague, Czech Republic

Abstract

In this work the results of investigation of Cd_1-xMn_xTe (x=0.01, 0.03, 0.05) solid solutions synthesis and their thin films' obtaining technology have been represented. Epitaxial films of monocrystalline Cd_1-хMn_хTe semimagnetic semiconductors were obtained on mica substrate by MBC method. Lattice parameters and crystal structure of samples were defined with X-ray diffraction method. It has been studied the electrophysical parameters. Defect formation energy has been calculated for Cd_1-хMn_хTe semimagnetic semiconductors by Ab-initio method using Atomistix Toolkit program. We have studied the dependence of defect formation energy on supercell size for charged vacancy and interstitial defects in Cd_1-хMnхTe thin films.

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M. A. Mehrabova, H. R. Nuriyev, H. S. Orujov, A. M. Nazarov, R. M. Sadigov, and V. N. Poladova "Defect formation energy for charge states and electrophysical properties of CdMnTe", Proc. SPIE 9450, Photonics, Devices, and Systems VI, 94500Q (6 January 2015); https://doi.org/10.1117/12.2073343

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