Paper
27 February 2015 Strained germanium-tin multiple quantum well microdisk resonators towards a light source on silicon
Colleen K. Shang, Robert Chen, Suyog Gupta, Yi-Chiau Huang, Yijie Huo, Errol Sanchez, Yihwan Kim, Theodore I. Kamins, Krishna C. Saraswat, James S. Harris
Author Affiliations +
Proceedings Volume 9367, Silicon Photonics X; 93671P (2015) https://doi.org/10.1117/12.2080146
Event: SPIE OPTO, 2015, San Francisco, California, United States
Abstract
Although the development of a monolithically-integrated, silicon-compatible light source has been traditionally limited by the indirect band gaps of Group IV materials, germanium-tin (Ge1-xSnx) is predicted to exhibit direct band gap behavior. In pseudomorphic conditions with materials of smaller lattice constant, the accumulation of compressive strain in Ge1-xSnx counteracts this behavior to prevent the direct band gap transition. One possible approach to compensate for this compressive strain is to introduce tensile strain into the system, which can be achieved by applying an external stressing agent to post-fabricated devices. We describe a suspended Ge0:922Sn0:078 multiple quantum well microdisk resonator cavity strained by 140 nm of highly compressively stressed silicon nitride. Raman shifts and photoluminescence redshifts indicate that an additional 0.23-0.30% strain can be induced in these microdisks with this approach. The ability to tune the optical performance of these resonator structures by strain engineering has the potential to enable the development of low threshold Ge1-xSnx-based lasers on Si.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Colleen K. Shang, Robert Chen, Suyog Gupta, Yi-Chiau Huang, Yijie Huo, Errol Sanchez, Yihwan Kim, Theodore I. Kamins, Krishna C. Saraswat, and James S. Harris "Strained germanium-tin multiple quantum well microdisk resonators towards a light source on silicon", Proc. SPIE 9367, Silicon Photonics X, 93671P (27 February 2015); https://doi.org/10.1117/12.2080146
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Cited by 3 scholarly publications.
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KEYWORDS
Germanium

Silicon

Raman spectroscopy

Quantum wells

Resonators

Tin

Etching

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